STB40NF03L
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
D2PAK TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (
- ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o
Value 30 30 ± 20 40 28 160 70...
