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SW20N50 - N-channel Power MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness MOSFET.
  • RDS(ON) (Max 0.27Ω)@VGS=10V.
  • Gate Charge (Max 80nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A.
  • RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW20N50
Manufacturer SAMWIN
File Size 785.64 KB
Description N-channel Power MOSFET
Datasheet download datasheet SW20N50 Datasheet

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Full PDF Text Transcription

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SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.
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