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SAMWIN
TO-251 TO-252
SW226N
N-channel MOSFET
BVDSS : 600V ID : 4.0A RDS(ON) : 2.3ohm
1 2 3 1 2 3 2
Features
■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 30nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
SW226N Datasheet
