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SW226NV - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • IPAK DPAK.
  • High ruggedness.
  • RDS(ON) (Max 2.5 Ω)@VGS=10V.
  • Gate Charge (Typical 34nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 2 13 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW226NV
Manufacturer SEMIPOWER
File Size 721.44 KB
Description MOSFET
Datasheet download datasheet SW226NV Datasheet

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Full PDF Text Transcription

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SAMWIN SW226NV Features IPAK DPAK ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typical 34nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 2 13 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.
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