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SW22N65D - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-247.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.22Ω)@VGS=10V.
  • Low Gate Charge (Typ 123nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW22N65D
Manufacturer Samwin
File Size 643.93 KB
Description N-channel MOSFET
Datasheet download datasheet SW22N65D Datasheet

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Full PDF Text Transcription

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SW22N65D N-channel Enhanced mode TO-247 MOSFET Features TO-247  High ruggedness  Low RDS(ON) (Typ 0.22Ω)@VGS=10V  Low Gate Charge (Typ 123nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charger, PC Power 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 22A RDS(ON) : 0.
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