NPT2019 Datasheet (Nitronex)

NPT2019, GaN HEMT

The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package.

RF Specifications (Pulsed *, 2.5 GHz): VDS = 4

NPT2019 Features

* Suitable for linear and pulsed applications

* Tunable from DC-6 GHz

* 48V Operation

* Industry Standard Plastic Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Appli