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NPT1015B - GaN Wideband Transistor

This page provides the datasheet information for the NPT1015B, a member of the NPT1015B-MA GaN Wideband Transistor family.

Datasheet Summary

Description

The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange.

Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

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Datasheet preview – NPT1015B

Datasheet Details

Part number NPT1015B
Manufacturer MA-COM
File Size 1.46 MB
Description GaN Wideband Transistor
Datasheet download datasheet NPT1015B Datasheet
Additional preview pages of the NPT1015B datasheet.

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Full PDF Text Transcription

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NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
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