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NPT2020-SMB2 - GaN Wideband Transistor

This page provides the datasheet information for the NPT2020-SMB2, a member of the NPT2020-MA GaN Wideband Transistor family.

Datasheet Summary

Description

The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package.

Features

  • GaN on Si HEMT Depletion Mode Transistor.
  • Suitable for Linear and Saturated.

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Datasheet preview – NPT2020-SMB2

Datasheet Details

Part number NPT2020-SMB2
Manufacturer MA-COM
File Size 1.16 MB
Description GaN Wideband Transistor
Datasheet download datasheet NPT2020-SMB2 Datasheet
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Full PDF Text Transcription

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NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  100 % RF Tested  Standard package with bolt down flange  RoHS* Compliant and 260°C reflow compatible Description The NPT2020 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 50 W (47 dBm) in an industry standard surface mount package. The NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
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