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NPT2010 - GaN on Silicon General Purpose Amplifier

Datasheet Summary

Description

The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange.

Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

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Datasheet preview – NPT2010

Datasheet Details

Part number NPT2010
Manufacturer MACOM
File Size 1.36 MB
Description GaN on Silicon General Purpose Amplifier
Datasheet download datasheet NPT2010 Datasheet
Additional preview pages of the NPT2010 datasheet.

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Full PDF Text Transcription

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NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 2.2 GHz  48 V Operation  15 dB Gain @ 2.15 GHz  61% Drain Efficiency @ 2.15 GHz  100% RF Tested  Industry Standard Metal-Ceramic Package  RoHS* Compliant Description The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
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