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NPT2018 - GaN HEMT

Datasheet Summary

Description

The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.

This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package.

Features

  • Suitable for linear and saturated.

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Datasheet preview – NPT2018

Datasheet Details

Part number NPT2018
Manufacturer Nitronex
File Size 897.71 KB
Description GaN HEMT
Datasheet download datasheet NPT2018 Datasheet
Additional preview pages of the NPT2018 datasheet.

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Full PDF Text Transcription

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NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 12.5W GaN HEMT Product Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12.5W (41 dBm) in an industry standard surface mount plastic package. RF Specifications (CW, 2.
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