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NPT25100 - 28V GaN Power Amplifier

Datasheet Summary

Description

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Rev.

Features

  • GaN on Si HEMT D-Mode Power Amplifier.
  • Suitable for Linear & Saturated.

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Datasheet preview – NPT25100

Datasheet Details

Part number NPT25100
Manufacturer MACOM
File Size 0.98 MB
Description 28V GaN Power Amplifier
Datasheet download datasheet NPT25100 Datasheet
Additional preview pages of the NPT25100 datasheet.

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Full PDF Text Transcription

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GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation from 2.1 - 2.7 GHz • 125 W P3dB Peak Envelope Power • 90 W P3dB CW Power • 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth • 16.5 dB Gain • 26% Efficiency • Characterized for Operation up to 32 V • 100% RF Tested • Thermally Enhanced Industry Standard Package • High Reliability Gold Metallization Process • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.
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