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NPT2021 - GaN Wideband Transistor

This page provides the datasheet information for the NPT2021, a member of the NPT2021-MA GaN Wideband Transistor family.

Datasheet Summary

Description

The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange.

Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

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Datasheet preview – NPT2021

Datasheet Details

Part number NPT2021
Manufacturer MA-COM
File Size 1.47 MB
Description GaN Wideband Transistor
Datasheet download datasheet NPT2021 Datasheet
Additional preview pages of the NPT2021 datasheet.

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Full PDF Text Transcription

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NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2.5 GHz  48 V Operation  16.5 dB Gain at 2.5 GHz  55 % Drain Efficiency at 2.5 GHz  100 % RF Tested  TO-272 Package  RoHS* Compliant and 260°C reflow compatible Description The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W in an industry standard plastic package with bolt down flange. The NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
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