Datasheet4U Logo Datasheet4U.com

NPT25100P - 28V GaN Power Amplifier

This page provides the datasheet information for the NPT25100P, a member of the NPT25100 28V GaN Power Amplifier family.

Datasheet Summary

Description

The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange.

Rev.

Features

  • GaN on Si HEMT D-Mode Power Amplifier.
  • Suitable for Linear & Saturated.

📥 Download Datasheet

Datasheet preview – NPT25100P

Datasheet Details

Part number NPT25100P
Manufacturer MACOM
File Size 0.98 MB
Description 28V GaN Power Amplifier
Datasheet download datasheet NPT25100P Datasheet
Additional preview pages of the NPT25100P datasheet.

📁 Similar Datasheet

  • NPT25 - Press Fit Triac (Naina Semiconductor)
  • NPT2010 - GaN HEMT (Nitronex)
  • NPT2018 - GaN HEMT (Nitronex)
  • NPT2019 - GaN HEMT (Nitronex)
  • NPT2020 - GaN Wideband Transistor (MA-COM)
  • NPT2020-SMB2 - GaN Wideband Transistor (MA-COM)
  • NPT2021 - GaN Wideband Transistor (MA-COM)
  • NPT2022 - HEMT D-Mode Amplifier (MA-COM)
  • NPT1015B - GaN Wideband Transistor (MA-COM)
  • NPT15 - Press Fit Triac (Naina Semiconductor)
Other Datasheets by MACOM
  • NPT25100 - 28V GaN Power Amplifier
  • NPT25100B - 28V GaN Power Amplifier
  • NPT2010 - GaN on Silicon General Purpose Amplifier

Full PDF Text Transcription

Click to expand full text
GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz Features • GaN on Si HEMT D-Mode Power Amplifier • Suitable for Linear & Saturated Applications • Broadband Operation from 2.1 - 2.7 GHz • 125 W P3dB Peak Envelope Power • 90 W P3dB CW Power • 10 W Linear Power @ 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth • 16.5 dB Gain • 26% Efficiency • Characterized for Operation up to 32 V • 100% RF Tested • Thermally Enhanced Industry Standard Package • High Reliability Gold Metallization Process • RoHS* Compliant Applications • Defense Communications • Land Mobile Radio • Avionics • Wireless Infrastructure • ISM • VHF/UHF/L/S-Band Radar Description The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation.
Published: |