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IRG7PK35UD1PbF Insulated Gate Bipolar Transistor

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Description

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150.

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Applications

*  Induction heating
*  Microwave ovens

IRG7PK35UD1PbF Distributors

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IRG7PK35UD1PbF Insulated Gate Bipolar Transistor International Rectifier
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