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IRG7PG42UDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG42UDPBF Description

  IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR .

IRG7PG42UDPBF Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Ultra fast soft recovery co-pak diode
*  Tight parameter distribution
*  Lead-free package Benefits

IRG7PG42UDPBF Applications

*  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses
*  Rugged transient performance for increased reliability
*  Excellent current sharing in parallel operation Applications
*  U. P. S.  
*  Welding 
*  Solar Inverter 
*  Inducti

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PG42UDPBF-like datasheet