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IRG7PG35U-EPbF, IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG35U-EPbF Description

  IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR .

IRG7PG35U-EPbF Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Tight parameter distribution
*  Lead-free package  C G E n-channel  C   VCES = 1000V IC = 35A, TC = 100°C

IRG7PG35U-EPbF Applications

*  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses
*  Rugged transient performance for increased reliability
*  Excellent current sharing in parallel operation Applications
*  U. P. S.  
*  Welding 
*  Solar Inverter 
*  Inducti

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRG7PG35U-EPbF, IRG7PG35UPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRG7PG35U-EPbF, IRG7PG35UPBF
Manufacturer
International Rectifier
File Size
411.36 KB
Datasheet
IRG7PG35UPBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG7PG35U-EPbF, IRG7PG35UPBF.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PG35U-EPbF-like datasheet