Description
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) trench IGBT technology
* Low switching losses
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C
Applications
* Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation
Applications
* U. P. S.
* Welding
* Solar Inverter
* Inducti