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IRG7PG35UPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PG35UPBF Description

  IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR .

IRG7PG35UPBF Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Tight parameter distribution
*  Lead-free package  C G E n-channel  C   VCES = 1000V IC = 35A, TC = 100°C

IRG7PG35UPBF Applications

*  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses
*  Rugged transient performance for increased reliability
*  Excellent current sharing in parallel operation Applications
*  U. P. S.  
*  Welding 
*  Solar Inverter 
*  Inducti

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PG35UPBF-like datasheet