IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION .

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Datasheet Specifications

Part number: IRG7PH28UD1MPBF
Manufacturer: International Rectifier
File Size: 409.01 KB
Datasheet: IRG7PH28UD1MPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

*  Low VCE (ON) trench IGBT technology
*  Low switching losses
*  Square RBSOA
*  Ultra-low VF diode
*  1300Vpk repetitive transient capacity
*  100% of the parts tested for ILM
*  Positive VCE (ON) temperature co-efficient
*  Tight parameter distribution
*  Lead

IRG7PH28UD1MPBF Distributors

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IRG7PH28UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PH28UD1MPBF-like datasheet