Datasheet Details
- Part number
- IRG7PH30K10PBF
- Manufacturer
- International Rectifier
- File Size
- 350.46 KB
- Datasheet
- IRG7PH30K10PBF_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PBF Description
PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR .IRG7PH30K10PBF Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient TigIRG7PH30K10PBF Applications
* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
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