IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .

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Datasheet Specifications

Part number: IRG7PH35U-EP
Manufacturer: International Rectifier
File Size: 397.80 KB
Datasheet: IRG7PH35U-EP-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation C GC E Applications
* U. P. S We

IRG7PH35U-EP Distributors

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IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PH35U-EP-like datasheet