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IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35U-EP Description

PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .

IRG7PH35U-EP Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH35U-EP Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation C GC E Applications
* U. P. S We

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH35U-EP-like datasheet