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IRG7PH35UDPbF, IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UDPbF Description

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG7PH35UDPbF Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-

IRG7PH35UDPbF Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.9V C Applications

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRG7PH35UDPbF, IRG7PH35UD-EP. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRG7PH35UDPbF, IRG7PH35UD-EP
Manufacturer
International Rectifier
File Size
492.67 KB
Datasheet
IRG7PH35UD-EP_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG7PH35UDPbF, IRG7PH35UD-EP.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH35UDPbF-like datasheet