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IRG7PH35UD1PbF, IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD.

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This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRG7PH35UD1PbF, IRG7PH35UD1-EP
Manufacturer
International Rectifier
File Size
430.92 KB
Datasheet
IRG7PH35UD1-EP_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP.
Please refer to the document for exact specifications by model.

Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight

IRG7PH35UD1PbF Distributors

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