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IRG7PH35UD1PbF, IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1PbF Description

PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD.

IRG7PH35UD1PbF Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILMĀ Positive VCE (ON) Temperature Co-Efficient Tight

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRG7PH35UD1PbF, IRG7PH35UD1-EP
Manufacturer
International Rectifier
File Size
430.92 KB
Datasheet
IRG7PH35UD1-EP_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRG7PH35UD1PbF, IRG7PH35UD1-EP.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG7PH35UD1PbF-like datasheet