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IRG7PH35UD1MPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH35UD1MPBF Description

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS .

IRG7PH35UD1MPBF Features

* Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight

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International Rectifier IRG7PH35UD1MPBF-like datasheet