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IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR

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Description

PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number
IRG7PH35UD-EP
Manufacturer
International Rectifier
File Size
492.67 KB
Datasheet
IRG7PH35UD-EP_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.9V C Applications

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