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IRG7PK35UD1-EPbF, IRG7PK35UD1PbF Insulated Gate Bipolar Transistor

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Description

  IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150.

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This datasheet PDF includes multiple part numbers: IRG7PK35UD1-EPbF, IRG7PK35UD1PbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRG7PK35UD1-EPbF, IRG7PK35UD1PbF
Manufacturer
International Rectifier
File Size
507.70 KB
Datasheet
IRG7PK35UD1PbF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRG7PK35UD1-EPbF, IRG7PK35UD1PbF.
Please refer to the document for exact specifications by model.

Applications

*  Induction heating
*  Microwave ovens

IRG7PK35UD1-EPbF Distributors

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