NDS8926 - Dual N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDS8926
Manufacturer	Fairchild ↗
File Size	331.08 KB
Description	Dual N-Channel MOSFET
Datasheet	NDS8926_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ___________________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drai.

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Published: May 12, 2005 |