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NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor

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Description

NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General .
Features These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS.

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Features

* These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance and provide superior switching performance. These devices are p

Applications

* such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. -6.5A, -20V. RDS(ON) = 0.035Ω @ VGS = -4.5V RDS(ON) = 0.05Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High po

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