NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

ON Semiconductor

Description

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high.

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Datasheet Specifications

Part number: NDS355AN
Manufacturer: ON Semiconductor ↗
File Size: 464.66 KB
Datasheet: NDS355AN-ONSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for

Applications

* in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package. 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SO

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NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor ON Semiconductor

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