NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDS356P
Manufacturer: Fairchild
File Size: 78.03 KB
Datasheet: NDS356P_FairchildSemiconductor.pdf
Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* -1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface m

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NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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