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NDS0610 P-Channel Enhancement Mode Field Effect Transistor

NDS0610 Description

P-Channel Enhancement Mode Field Effect Transistor NDS0610 General .
This P. Channel Enhancement Mode Field Effect Transistors are Produced using onsemi’s proprietary, high cell density, DMOS technology.

NDS0610 Features

* 0.12 A,
* 60 V
* RDS(on) = 10 W @ VGS =
* 10 V
* RDS(on) = 20 W @ VGS =
* 4.5 V
* Voltage Controlled P
* Channel Small Signal Switch
* High Density Cell design for Low RDS(on)
* High Saturation Current ABSOLUTE MA

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P-Channel Enhancement Mode Field Effect Transistor ON Semiconductor
ON Semiconductor NDS0610-like datasheet