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NDS0605 P-Channel Enhancement Mode Field Effect Transistor

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Description

NDS0605 July 2002 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number
NDS0605
Manufacturer
Fairchild
File Size
185.04 KB
Datasheet
NDS0605_FairchildSemiconductor.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

Features

* 0.18A,
* 60V. RDS(ON) = 5 Ω @ VGS =
* 10 V
* Voltage controlled p-channel small signal switch
* High density cell design for low RDS(ON)
* High saturation current DD SOT-23 S G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo

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