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NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS332P Description

June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

NDS332P Features

* -1 A, -20 V, RDS(ON) = 0.41 Ω @ VGS= -2.7 V RDS(ON) = 0.3 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design f

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Datasheet Details

Part number
NDS332P
Manufacturer
Fairchild
File Size
283.08 KB
Datasheet
NDS332P_FairchildSemiconductor.pdf
Description
P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild NDS332P-like datasheet