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NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS336P Description

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General .
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS.

NDS336P Features

* -1.2 A, -20 V, RDS(ON) = 0.27 Ω @ VGS= -2.7 V RDS(ON) = 0.2 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design

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Datasheet Details

Part number
NDS336P
Manufacturer
Fairchild
File Size
77.51 KB
Datasheet
NDS336P_FairchildSemiconductor.pdf
Description
P-Channel Logic Level Enhancement Mode Field Effect Transistor

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild NDS336P-like datasheet