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NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS335N Description

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techn.

NDS335N Features

* 1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

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Datasheet Details

Part number
NDS335N
Manufacturer
Fairchild
File Size
59.51 KB
Datasheet
NDS335N_FairchildSemiconductor.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild NDS335N-like datasheet