NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techn.

📥 Download Datasheet

NDS335N Datasheet Preview — Preview of NDS335N PDF

Datasheet Specifications

Part number: NDS335N
Manufacturer: Fairchild
File Size: 59.51 KB
Datasheet: NDS335N_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V RDS(ON) = 0.11 Ω @ VGS= 4.5 V. Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and ma

NDS335N Distributors

📁 Related Datasheet

NDS355AN NDS36P NDS02ZG-M6 NDS03ZA NDS03ZA-M6 NDS03ZB-M6

📌 All Tags

NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

Fairchild NDS335N-like datasheet