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NDS8410S Single N-channel MOSFET

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Description

February 1997 NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Features

* 8.6 A, 30 V. RDS(ON) = 0.02 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 ABSOLUTE

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