NDS8936 - Dual N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDS8936
Manufacturer	Fairchild ↗
File Size	330.73 KB
Description	Dual N-Channel MOSFET
Datasheet	NDS8936_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.3A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A= 25°C unless oth.

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Published: May 12, 2005 |