NDS8934 - Dual P-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDS8934
Manufacturer	Fairchild ↗
File Size	77.78 KB
Description	Dual P-Channel MOSFET
Datasheet	NDS8934_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-3.8A, -20V. RDS(ON) = 0.07Ω @ VGS = -4.5V RDS(ON) = 0.1Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS89.

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Published: May 12, 2005 |