NDS8958 - Dual N&P-Channel MOSFET

Fairchild

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Datasheet Details

Part number	NDS8958
Manufacturer	Fairchild ↗
File Size	354.64 KB
Description	Dual N&P-Channel MOSFET
Datasheet	NDS8958_FairchildSemiconductor.pdf

NDS8958 Product details

Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

N-Channel 5.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.

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Other Datasheets by Fairchild

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Published: May 12, 2005 |