NDS8961 - Dual N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDS8961
Manufacturer	Fairchild ↗
File Size	331.09 KB
Description	Dual N-Channel MOSFET
Datasheet	NDS8961_FairchildSemiconductor.pdf

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain C.

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Published: May 12, 2005 |