FDC608PZ Datasheet (Fairchild Semiconductor)

FDC608PZ, N-Channel MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power app

FDC608PZ Features

* 5.8 A,

* 20 V. RDS(ON) = 30 mΩ @ VGS =

* 4.5 V RDS(ON) = 43 mΩ @ VGS =

* 2.5 V

* Low Gate Charge

* High performance trench technology for extremely low RDS(ON)

* SuperSOT TM

* 6 package: small footprint (72% smaller than standa