FDC602P Datasheet (Fairchild Semiconductor)

FDC602P, P-Channel MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V * 12V).

Applications * Battery management * Load switch *

FDC602P Features

* 5.5 A,

* 20 V RDS(ON) = 35 mΩ @ VGS =

* 4.5 V RDS(ON) = 50 mΩ @ VGS =

* 2.5 V

* Fast switching speed

* High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise