Datasheet4U Logo Datasheet4U.com

FDC610PZ - MOSFET

📥 Download Datasheet

Preview of FDC610PZ PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDC610PZ Product details

Description

August 2007 tm Max rDS(on) = 42mΩ at VGS = 10V, ID = 4.9A Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM 6 package: small footprint (72% smaller than standard SO 8) low profile (1mm thick). RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Po

Features

📁 FDC610PZ Similar Datasheet

  • FDC604P - P-Channel MOSFET (ON Semiconductor)
  • FDC608PZ - P-Channel MOSFET (ON Semiconductor)
  • FDC608PZ-F171 - P-Channel MOSFET (ON Semiconductor)
  • FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDC6303N - Dual N-Channel Digital FET (onsemi)
  • FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
  • FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)
Other Datasheets by Fairchild Semiconductor
  • FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET
  • FDC6020C - Complementary PowerTrench MOSFET
  • FDC602P - P-Channel MOSFET
  • FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET
  • FDC606P - P-Channel 1.8V Specified PowerTrench MOSFET
  • FDC6301N - Dual N-Channel / Digital FET
Published: |