FDC6020C - Complementary PowerTrench MOSFET

Name: FDC6020C
SKU: FDC6020C-210502

Fairchild Semiconductor

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Datasheet Details

Part number	FDC6020C
Manufacturer	Fairchild Semiconductor
File Size	211.51 KB
Description	Complementary PowerTrench MOSFET
Datasheet	FDC6020C_FairchildSemiconductor.pdf

FDC6020C Product details

Description

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1.
4.2 A,.
20V. RDS(ON) = 55 mΩ @ VGS =.
4.5 V RDS(ON) = 82 mΩ @ VGS =.
2.5 V Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size.

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Published: Mar 30, 2005 |