FDC6302P - Dual P-Channel MOSFET

Name: FDC6302P
SKU: FDC6302P-1492888

ON Semiconductor

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Datasheet Details

Part number	FDC6302P
Manufacturer	ON Semiconductor
File Size	343.75 KB
Description	Dual P-Channel MOSFET
Datasheet	FDC6302P-ONSemiconductor.pdf

FDC6302P Product details

Description

These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

Features

-25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter VDSS Drain-Source Voltage VG.

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Published: Dec 12, 2021 |