FDC6321C - Dual N & P-Channel Digital FET

ON Semiconductor

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Datasheet Details

Part number	FDC6321C
Manufacturer	ON Semiconductor
File Size	332.77 KB
Description	Dual N & P-Channel Digital FET
Datasheet	FDC6321C-ONSemiconductor.pdf

FDC6321C Product details

Description

These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance.

Features

N.
Channel 0.68 A, 25 V RDS(ON) = 0.45 W @ VGS = 4.5 V.
P.
Channel.
0.46 A,.
25 V RDS(ON) = 1.1 W @ VGS =.
4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.0 V.
Gate.
Source Zener for ESD Ruggedness. >6 kV Human Body Model.
Replace Multiple Dual NPN & PNP Digital Transistors.
This is a Pb.
Free Device DATA SHEET www. onsemi. com VDSS 25 V.

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Published: Dec 12, 2021 |