FDC6322C Datasheet (Fairchild Semiconductor) - Dual N & P Channel / Digital FET

FDC6322C, Dual N & P Channel / Digital FET

These dual N & P Channel logic level enhancement mode field effec transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

The device is an improved design especially for low vol

FDC6322C Features

* N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V. P-Ch 25 V, -0.46 A, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace NPN & PNP digital transistors. SOT