FDC6327C - Dual-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDC6327C
Manufacturer	ON Semiconductor
File Size	357.25 KB
Description	Dual-Channel MOSFET
Datasheet	FDC6327C-ONSemiconductor.pdf

FDC6327C Product details

Description

These N & P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

N.
Channel 2.7 A, 20 V RDS(ON) = 0.08 W @ VGS = 4.5 V RDS(ON) = 0.12 W @ VGS = 2.5 V.
P.
Channel.
1.6 A,.
20 V RDS(ON) = 0.17 W @ VGS =.
4.5 V RDS(ON) = 0.25 W @ VGS =.
2.5 V.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint (72% Smaller than SO.
8); Low Profile (1 mm Thick).
This is a.

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Published: Dec 12, 2021 |