FDC6310P - Dual P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDC6310P
Manufacturer	ON Semiconductor
File Size	275.33 KB
Description	Dual P-Channel MOSFET
Datasheet	FDC6310P-ONSemiconductor.pdf

FDC6310P Product details

Description

These P Channel 2.5 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

2.2 A,.
20 V.
RDS(ON) = 125 mW @ VGS =.
4.5 V.
RDS(ON) = 190 mW @ VGS =.
2.5 V.
Low Gate Charge.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint 72% Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 21, 2023 |