FDC6304P - Digital FET/ Dual P-Channel

Fairchild Semiconductor

Datasheet Details

Part number	FDC6304P
Manufacturer	Fairchild Semiconductor
File Size	74.28 KB
Description	Digital FET/ Dual P-Channel
Datasheet	FDC6304P_FairchildSemiconductor.pdf

These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology.

-25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other.

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Published: Mar 30, 2005 |