FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor

📥 Download Datasheet

FDC6306P Datasheet Preview — Preview of FDC6306P PDF

Datasheet Details

Part number	FDC6306P
Manufacturer	Fairchild Semiconductor
File Size	235.42 KB
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
Datasheet	FDC6306P_FairchildSemiconductor.pdf

FDC6306P Product details

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V.
Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

📁 FDC6306P Similar Datasheet

FDC6310P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6312P - Dual P-Channel 20V MOSFET (VBsemi)
FDC6320C - Dual N & P Channel Digital FET (ON Semiconductor)
FDC6321C - Dual N & P-Channel Digital FET (ON Semiconductor)
FDC6323L - Integrated Load Switch (ON Semiconductor)
FDC6324L - Integrated Load Switch (ON Semiconductor)
FDC6325L - Integrated Load Switch (ON Semiconductor)
FDC6326L - Integrated Load Switch (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDC6301N - Dual N-Channel / Digital FET
FDC6302P - Digital FET/ Dual P-Channel
FDC6303N - Dual N-Channel Digital FET
FDC6304P - Digital FET/ Dual P-Channel
FDC6305N - Dual N-Channel MOSFET
FDC6308P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

Published: Mar 30, 2005 |